What is Dummy CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped?

Dummy CZ-Si Wafer, Size: 8”, Orientation: (100), Boron Doped is a high-quality silicon wafer primarily used in semiconductor processing, research, and calibration applications. These wafers are crucial for testing, equipment calibration, and process development in microelectronics and nanotechnology.

Chemical Properties and CAS Number

• Material: Boron-doped Czochralski Silicon (CZ-Si)
• CAS Number: 7440-21-3 (Silicon)
• Wafer Size: 8 inches (200 mm)
• Crystal Orientation: (100)
• Doping Type: P-type (Boron-doped)
• Resistivity: Typically 1-10 Ω·cm
• Surface Finish: Polished or etched
• Thickness: Standard 725 ± 25 µm
• Thermal Conductivity: ~149 W/m·K
• Dielectric Constant: ~11.7

Applications of Dummy CZ-Si Wafer (8”, Orientation: (100), Boron Doped)

1. Semiconductor Process Testing

Used in semiconductor manufacturing to test and calibrate process conditions before production runs.

2. Equipment Calibration

Ensures accuracy and consistency in semiconductor processing equipment, including photolithography and etching machines.

3. Microfabrication and Research

Ideal for R&D applications in MEMS, IC design, and thin-film deposition.

4. Thin Film Deposition and Coatings

Serves as a base substrate for depositing various thin films used in microelectronics.

5. Ion Implantation and Etching

Utilized in doping experiments and etching process development for semiconductor device fabrication.

Pricing of Dummy CZ-Si Wafer (8”, Orientation: (100), Boron Doped)

Pricing depends on factors such as purity, surface finish, and bulk quantity:

• Standard Grade: Typically ranges from $50 – $200 per wafer
• High-Purity Grade: Prices range from $200 – $500 per wafer, depending on specifications and industry demand.

Factors Influencing Pricing

• Wafer diameter and thickness
• Surface quality (polished vs. etched)
• Doping level and resistivity range
• Order volume and supplier pricing policies

Conclusion

Dummy CZ-Si Wafer (8”, Orientation: (100), Boron Doped) is an essential component in semiconductor research and process development. Its precision, high purity, and controlled doping make it suitable for calibration, testing, and thin-film applications in microelectronics.